Determination of Mg concentration and distribution in MgxZn1-xO films for photonic devices application

被引:4
|
作者
Ferlito, E. P. [1 ]
Ricciari, R. [1 ]
Padalino, M. [1 ]
Grasso, S. [2 ]
Battaglia, A. [3 ]
Sciuto, M. [3 ]
Mello, D. [1 ]
Tapfer, L. [4 ]
Gerardi, C. [1 ]
机构
[1] STMicroelectronics, I-95121 Catania, Italy
[2] STMicroelectronics, Milan, Italy
[3] 3Sun, I-95121 Catania, Italy
[4] ENEA, UTTMATB SS, I-72100 Brindisi, Italy
关键词
MgxZn1-xO; ToF-SIMS; Auger; XRD; OPEN-CIRCUIT VOLTAGE; SOLAR-CELLS; TOTAL-REFLECTION; BAND-OFFSET; X-RAYS;
D O I
10.1002/sia.5485
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Among the transparent conductor, one of the most interesting is the Al doped MgxZn1-xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped Mg(x)Zn(1-)xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X-ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. Copyright (C) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:823 / 826
页数:4
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