Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon

被引：18
|
作者：
Iancu, V [1 ]
Ciurea, ML
Draghici, M
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest 77206, Romania
[2] Natl Inst Mat Phys, Bucharest 76900, Romania
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 01期
关键词：
D O I：
10.1063/1.1576301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model for trapping phenomena in nanocrystalline silicon investigated by the optical charging spectroscopy method is proposed. The model takes into account all the possible contributions to the discharge current. The results previously obtained on fresh and passivated porous silicon samples are interpreted within the framework of the model, which provides a good fit to the experimental data. The role played by the different kinds of trapping centers (donors and acceptors, surface and bulk) and the different trap parameters is analyzed. (C) 2003 American Institute of Physics.
引用
收藏
页码：216 / 223
页数：8
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