Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon

被引：18
|
作者：
Iancu, V [1 ]
Ciurea, ML
Draghici, M
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest 77206, Romania
[2] Natl Inst Mat Phys, Bucharest 76900, Romania
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 01期
关键词：
D O I：
10.1063/1.1576301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model for trapping phenomena in nanocrystalline silicon investigated by the optical charging spectroscopy method is proposed. The model takes into account all the possible contributions to the discharge current. The results previously obtained on fresh and passivated porous silicon samples are interpreted within the framework of the model, which provides a good fit to the experimental data. The role played by the different kinds of trapping centers (donors and acceptors, surface and bulk) and the different trap parameters is analyzed. (C) 2003 American Institute of Physics.
引用
收藏
页码：216 / 223
页数：8
相关论文
共 50 条
  • [21] Optical absorption in porous silicon studied by photoacoustic spectroscopy
    Obraztsov, AN
    Okushi, H
    Watanabe, H
    Timoshenko, VY
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 203 (02): : 565 - 569
  • [22] Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon
    Ciurea, M. L.
    Iancu, V.
    Stavarache, I.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (06): : 2156 - 2160
  • [23] Investigation of Light Trapping from Porous Silicon Surface for the Enhancement of Silicon Solar Cell Performance
    Rahim, A. F. A.
    Ahmed, M. A.
    Razali, N. S. M.
    Radzali, R.
    Mahmood, A.
    Hamzah, I. H.
    Noorsal, E.
    ACTA PHYSICA POLONICA A, 2019, 135 (04) : 637 - 642
  • [24] FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides
    Dissanayake, Chethiya M.
    Premaratne, Malin
    Rukhlenko, Ivan D.
    Agrawal, Govind P.
    OPTICS EXPRESS, 2010, 18 (20): : 21427 - 21448
  • [25] HIGH-PRESSURE OPTICAL INVESTIGATION OF POROUS SILICON
    ZHOU, WM
    SHEN, H
    HARVEY, JF
    LUX, RA
    DUTTA, M
    LU, F
    PERRY, CH
    TSU, R
    KALKHORAN, NM
    NAMAVAR, F
    APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1435 - 1437
  • [26] Laser local oxidation of porous silicon: a FTIR spectroscopy investigation
    Rocchia, M
    Rossi, AM
    Borini, S
    Boarino, L
    Amato, G
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (08): : 1658 - 1661
  • [27] Investigation of porous silicon carbide by methods of vibrational and luminescence spectroscopy
    Danishevskii, AM
    Shuman, VB
    Rogachev, AY
    Ivanov, PA
    SEMICONDUCTORS, 1995, 29 (12) : 1106 - 1111
  • [28] Optical spectroscopy studies of single layers and superstructures of porous silicon
    Mattei, G
    GNSR 2001: STATE OF ART AND FUTURE DEVELOPMENT IN RAMAN SPECTROSCOPY AND RELATED TECHNIQUES, 2002, : 147 - 164
  • [29] Explosive nanocrystalline porous silicon films and their use in qualitative atomic emission spectroscopy.
    Kirtland, JD
    Mikulec, FV
    Sailor, MJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U707 - U708
  • [30] Comparison of structural and optical properties of the electrochemically etched porous silicon and nanocrystalline silicon films prepared by PECVD
    Vikulov, V. A.
    Korobtsov, V. V.
    Markidonov, E. V.
    Hong, B.
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2006, 2 : 91 - 95
12345