Negative differential resistance in nanotube devices

被引：87
|
作者：
Léonard, F [1 ]
Tersoff, J [1 ]
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.85.4767
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular maybe suitable for device integration.
引用
收藏
页码：4767 / 4770
页数：4
相关论文
共 50 条
  • [31] Negative differential resistance in parallel single-walled carbon nanotube contacts
    Liu, Qihang
    Luo, Guangfu
    Qin, Rui
    Li, Hong
    Yan, Xin
    Xu, Chengyong
    Lai, Lin
    Zhou, Jing
    Hou, Shimin
    Wang, Enge
    Gao, Zhengxiang
    Lu, Jing
    PHYSICAL REVIEW B, 2011, 83 (15):
  • [32] Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction
    Song Jiuxu
    Yang Yintang
    Liu Hongxia
    Guo Lixin
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (04)
  • [33] Negative differential resistance in carbon atomic wire-carbon nanotube junctions
    Khoo, Khoong Hong
    Neaton, J. B.
    Son, Young Woo
    Cohen, Marvin L.
    Louie, Steven G.
    NANO LETTERS, 2008, 8 (09) : 2900 - 2905
  • [34] Negative Differential Resistance: Gate Controlled and Photoconductance Enhancement in Carbon Nanotube Intraconnects
    Lee, S. W.
    Kornblit, A.
    Lopez, D.
    Rotkin, S. V.
    Sirenko, A. A.
    Grebel, H.
    NANO LETTERS, 2009, 9 (04) : 1369 - 1373
  • [35] Modeling the semiconductor devices with negative differential resistance based on nitride nanowires
    Mozharov, A. M.
    Komissarenko, F. E.
    Bolshakov, A. D.
    Fedorov, V. V.
    Sapunov, G. A.
    Cirlin, G. E.
    Mukhin, I. S.
    4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
  • [36] Negative differential resistance and electrical bistability in nanocrystal organic memory devices
    Tu, Chia-Hsun
    Kwong, Dim-Lee
    Lai, Yi-Sheng
    APPLIED PHYSICS LETTERS, 2006, 89 (25)
  • [37] SUBNANOSECOND 32 BIT MULTIPLIER USING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES
    MOHAN, S
    MAZUMDER, P
    HADDAD, GI
    ELECTRONICS LETTERS, 1991, 27 (21) : 1929 - 1931
  • [38] Negative differential resistance in MIM devices from vacuum to atmospheric pressure
    Nottingham Trent Univ, Nottingham, United Kingdom
    Int J Electron, 4 (435-439):
  • [39] Designing Negative Differential Resistance Devices Based on Self-Heating
    Gibson, Gary A.
    ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (22)
  • [40] To induce negative differential resistance in organic devices through a ferroelectric polymer
    Rath, Arup K.
    Pal, Amlan J.
    ORGANIC ELECTRONICS, 2009, 10 (06) : 1116 - 1119
12345