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- [31] Reduction of threading dislocation density and suppression of crack formation in InxGa1-xP(x approximately 0.5) grown on Si(100) using strained short-period superlattices Jpn J Appl Phys Part 2 Letter, 2 B (L187-L189):
- [32] Reduction of threading dislocation density and suppression of crack formation in InxGa1-xP(x similar to 0.5) grown on Si(100) using strained short-period superlattices JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (2B): : L187 - L189