Reduction of threading dislocation density and suppression of crack formation in InxGa1-xP(x approximately 0.5) grown on Si(100) using strained short-period superlattices

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Toyohashi Univ of Technology, Toyohashi, Japan [1 ]
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Jpn J Appl Phys Part 2 Letter | / 2 B卷 / L187-L189期
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