The effects of laser annealing ambient and the number of laser shots on the morphology of poly-Si films

被引：5

作者：

Suga, K ^{[1
]}

Chida, M ^{[1
]}

Hara, A ^{[1
]}

Mishima, Y ^{[1
]}

Sasaki, N ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 2003年 / 86卷 / 07期

关键词：

laser annealing; ambient; poly-Si film; grain size; excimer laser; XeCl; TFT;

D O I：

10.1002/ecjb.10098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have examined the effects of the laser annealing ambient and the number of laser shots on the morphology and the grain size of excimer laser-annealed poly-Si films. In the case of a high oxygen partial pressure (> 10e(-3) Torr), the surface roughness increases with the number of laser shots. However, the surface roughness decreases as the number of laser shots increases at a low oxygen partial pressure(< 10e(-3) Torr). The grain size of poly-Si decreases as the oxygen partial pressure decreases. A thin surface oxide film formed by laser irradiation is the cause of these phenomena. There is no saturation point regarding the surface roughness, even at an oxygen partial pressure of 10e(-5) Torr, so that it is important to control the oxygen in the laser annealing ambient and on silicon film surfaces in order to control poly-Si TFT performance. (C) 2003 Wiley Periodicals, Inc.

引用

页码：42 / 50

页数：9

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