Annealing effects of excimer-laser-produced large-grain poly-Si thin-film transistors

被引：0
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作者：
Choi, Do-Hyun [1 ]
Matsumura, Masakiyo [1 ]
机构：
[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 1 B期
关键词：
Field effect transistors;
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