Gate dielectric integrity of all organic thin film transistor and annealing effect

被引：0

作者：

Hong, Sung Hun ^{[1
]}

Kang, Jong Mook ^{[1
]}

Lim, Towoo ^{[1
]}

Kim, Jae Hyeok ^{[1
]}

Choi, Jong Sun ^{[1
]}

Kim, Young Min ^{[1
]}

机构：

[1] Hongik Univ, Dept Elect Informat & Control Engn, Seoul 121791, South Korea

来源：

AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2 | 2007年

关键词：

OTFTs; pentacene; polymer dielectric; polystyrene; anneal; gate leakage;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A significant degradation in the organic gate dielectric integrity is reported when an organic thin film transistor (OTFT) is exposed to air. The OTFT with polystyrene (PS) gate dielectric shows an increased I-OFF when the device has been exposed to air for a few weeks. The increased I-OFF is found to be attributed to degraded PS insulator property. The poor integrity of the gate dielectric causes an excessive I-OFF of the OTFT. Interestingly, the gate leakage current can be suppressed after the device is subjected to a few I-V tests at elevated temperatures and then reasonable I-OFF can be recovered.

引用

页码：1696 / 1699

页数：4

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