Organic thin-film transistor integration using silicon nitride gate dielectric

被引：25
|
作者：
Li, Flora M. [1 ]
Nathan, Arokia
Wu, Yiliang
Ong, Beng S.
机构：
[1] Univ Waterloo, Waterloo, ON N2L 3G1, Canada
[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[3] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.2718505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact of film composition of silicon nitride (SiNx) gate dielectrics on the electrical performance of organic thin-film transistors (OTFTs) was investigated. Polythiophene OTFTs with SiNx dielectric, prepared using a series of interface modification processes, exhibited effective mobility of 0.09 cm(2)/V s and on/off current ratio of 10(7). Overall improvement in mobility, on/off current ratio, and gate leakage current was observed as silicon content in SiNx increases. The results demonstrate the viability of using SiNx for OTFTs. The low temperature processing and large area deposition capabilities of SiNx hold great promise for integration of OTFT circuits for large area flexible electronic applications. (c) 2007 American Institute of Physics.
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页数：3
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