Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

被引：44
|
作者：
Qian, Ling Xuan [1 ]
Lai, Peter T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期
关键词：
Amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); HfLaO; fluorine; plasma; ZINC-OXIDE;
D O I：
10.1109/LED.2013.2296895
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF3/O-2 plasma. The saturation carrier mobility can be improved from 29.6 cm(2)/V . s to as high as 39.8 cm(2)/V . s. In addition, the passivation effect of the fluorination on the dominant donor-like traps at the InGaZnO/HfLaO interface is observed, as reflected by suppression of hysteresis phenomenon and smaller subthreshold swing. Measurement result of low-frequency noise further supports the improvement in electrical properties by the plasma treatment.
引用
收藏
页码：363 / 365
页数：3
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