Organic thin-film transistor integration using silicon nitride gate dielectric

The impact of film composition of silicon nitride (SiNx) gate dielectrics on the electrical performance of organic thin-film transistors (OTFTs) was investigated. Polythiophene OTFTs with SiNx dielectric, prepared using a series of interface modification processes, exhibited effective mobility of 0.09 cm(2)/V s and on/off current ratio of 10(7). Overall improvement in mobility, on/off current ratio, and gate leakage current was observed as silicon content in SiNx increases. The results demonstrate the viability of using SiNx for OTFTs. The low temperature processing and large area deposition capabilities of SiNx hold great promise for integration of OTFT circuits for large area flexible electronic applications. (c) 2007 American Institute of Physics.