Spin-Coatable Gate Dielectric for Organic Thin Film Transistor

被引：0
|
作者：
Isogai, Yukie [1 ]
Katoh, Takeyoshi [1 ]
Sugitani, Koichi [1 ]
Hirano, Takaaki [1 ]
Tada, Mitsushi [1 ]
Fujisaki, Yoshihide [2 ]
Nakajima, Yoshiki [2 ]
Yamamoto, Toshihiro [2 ]
Suzuki, Teruhiko [1 ]
机构：
[1] ZEON Corp, Kawasaki Ku, 1-2-1 Yako, Kawasaki, Kanagawa 2109507, Japan
[2] Japan Broadcasting Corp NHK, Sci & Technol Res Labs, Tokyo, Japan
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed Spin-Coatable Gate Dielectric (CGDE) for flexible organic thin film transistor (OTFT). It is applicable to P-type and N-type organic semiconductor with stable TFT characteristics. Under long term bias stress to gate, little hysteresis and threshold shift were detected. It can meet the cost reduction of manufacturing flexible displays.
引用
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页码：911 / 912
页数：2
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