Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO

被引：545

作者：

Ohta, H

Kawamura, K

Orita, M

Hirano, M

Sarukura, N

Hosono, H

机构：

[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Okazaki Natl Res Inst, Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p-n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron-hole plasma of ZnO. (C) 2000 American Institute of Physics. [S0003-6951(00)02630-9].

引用

页码：475 / 477

页数：3

共 50 条

[21] STRONG INJECTION IN A NONDEGENERATE P-N JUNCTION
KONSTANT.OV
EFROS, AL
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (05): : 1169 - +
[22] Current Injection induced Terahertz Emission from p-n Si Structures
Andrianov, A. V.
Zakharin, A. O.
Sobolev, N. A.
Vasilyev, Yu. B.
Egorov, S. V.
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2016,
[23] GAAS P-N JUNCTION LASER WITH NONUNIFORM DISTRIBUTION OF INJECTION CURRENT
BASOV, NG
ZAKHAROV, YP
NIKITIN, VV
SHERONOV, AA
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2532 - +
[24] CURRENT AMPLIFICATION BY SILICON P-N JUNCTION
KANAI, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1951, 6 (03) : 211 - 212
[25] THRESHOLD CURRENT FOR P-N JUNCTION LASERS
MOLL, JL
GIBBONS, JF
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (02) : 157 - 159
[26] Fabrication and Electrical Properties of Transparent n-ZnO:Al-p-NiO:Li Junction
Mistry, Jaydip
Mistry, B. V.
Trivedi, U. N.
Pinto, R.
Joshi, U. S.
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 2011, 1349 : 725 - +
[27] NEGATIVE CURRENT TRANSIENTS IN A P-N JUNCTION
GREEN, M
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (02): : 192 - &
[28] Preparation, characterization and activity evaluation of p-n junction photocatalyst p-ZnO/n-TiO2
Chen Shifu
Zhao Wei
Liu Wei
Zhang Sujuan
APPLIED SURFACE SCIENCE, 2008, 255 (05) : 2478 - 2484
[29] Transparent p-CuI/n-ZnO heterojunction diodes
Schein, Friedrich-Leonhard
von Wenckstern, Holger
Grundmann, Marius
APPLIED PHYSICS LETTERS, 2013, 102 (09)
[30] Light emission from planar-type ZnO p-n junction fabricated by PLD
Kusumori, Takeshi
Nakao, Setsuo
Yoshimura, Kazuki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10, 2013, 10 (10): : 1261 - 1264

← 1 2 3 4 5 →