Current Injection induced Terahertz Emission from p-n Si Structures

被引：0
|
作者：
Andrianov, A. V. [1 ]
Zakharin, A. O. [1 ]
Sobolev, N. A. [1 ]
Vasilyev, Yu. B. [1 ]
Egorov, S. V. [2 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Min Univ, St Petersburg 199106, Russia
来源：
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年
关键词：
SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on experimental observation of terahertz electroluminescence induced by current injection in Si p-n-structures at low temperatures. The spectra of the emission demonstrate superposition of narrow emission lines and broad background. The peak positions of the emission lines are in reasonable agreement with the known energies of intracenter optical transitions in phosphorus donor. The broad background most likely is caused by the THz emission from hot noneqilibrium carriers, which can appear in the structure under the injection.
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