Current Injection induced Terahertz Emission from p-n Si Structures

被引：0
|
作者：
Andrianov, A. V. [1 ]
Zakharin, A. O. [1 ]
Sobolev, N. A. [1 ]
Vasilyev, Yu. B. [1 ]
Egorov, S. V. [2 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Min Univ, St Petersburg 199106, Russia
来源：
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年
关键词：
SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on experimental observation of terahertz electroluminescence induced by current injection in Si p-n-structures at low temperatures. The spectra of the emission demonstrate superposition of narrow emission lines and broad background. The peak positions of the emission lines are in reasonable agreement with the known energies of intracenter optical transitions in phosphorus donor. The broad background most likely is caused by the THz emission from hot noneqilibrium carriers, which can appear in the structure under the injection.
引用
收藏
页数：2
相关论文
共 50 条
  • [21] VISIBLE LIGHT FROM A SI P-N JUNCTION
    NEWMAN, R
    DASH, WC
    HALL, RN
    BURCH, WE
    PHYSICAL REVIEW, 1955, 98 (05): : 1536 - 1537
  • [22] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
    SENITZKY, P
    PHYSICAL REVIEW, 1959, 116 (04): : 874 - 879
  • [23] ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES
    EVSTROPOV, VV
    ZHILYAEV, YV
    NAZAROV, N
    SERGEEV, DV
    FEDOROV, LM
    SEMICONDUCTORS, 1993, 27 (04) : 369 - 371
  • [24] DRIVING OF THE PARAMETERS OF GaAs:Si p-n STRUCTURES BY GIRATRONIC IRRADIATION
    Sukach, G. A.
    Kidalov, V. V.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (04) : 138 - 149
  • [25] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
    TAUC, J
    NATURE, 1958, 181 (4601) : 38 - 38
  • [26] COHERENT LIGHT EMISSION FROM P-N JUNCTIONS
    HALL, RN
    SOLID-STATE ELECTRONICS, 1963, 6 (05) : 405 - &
  • [27] DIRECT INJECTION READOUT OF THE P-N PBS-SI HETEROJUNCTION DETECTOR
    STECKL, AJ
    TAM, KY
    MOTAMEDI, ME
    APPLIED PHYSICS LETTERS, 1979, 35 (07) : 537 - 539
  • [28] Terahertz Source with Graphene p-n Junction
    Liu, Jingping
    Ban, Dayan
    Safavi-Naeini, Safieddin
    Zhao, Huichang
    2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015,
  • [29] Fabrication and current injection UV-light emission from a transparent p-n heterojunction composed of p-SrCu2O2 and n-ZnO
    Ohta, H
    Orita, M
    Hirano, M
    Hosono, H
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS I, 2002, 214-2 : 75 - 80
  • [30] CHARACTERISTICS OF BEHAVIOR OF CURRENT INDUCED BY AN ELECTRON-PROBE IN HIGH-VOLTAGE P-N STRUCTURES
    KONNIKOV, SG
    KOROLKOV, VI
    NIKITIN, VG
    SOBOLEV, MM
    TOT, B
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (05): : 581 - 582
12345