Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

被引：60

作者：

Walsh, P ^{[1
]}

Omeltchenko, A

Kalia, RK

Nakano, A

Vashishta, P

Saini, S

机构：

[1] Univ So Calif, Dept Mat Sci & Engn, Collab Adv Comp & Simulat, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA

[3] Univ So Calif, Dept Comp Sci, Los Angeles, CA 90089 USA

[4] NASA, Numer Aerosp Simulat Facil, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.1535263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoindentation of crystalline and amorphous silicon nitride films is studied using 10-million-atom molecular dynamics simulations. A rigid pyramid-shaped indenter tip is used. Load-displacement curves are computed and are used to derive hardness and elastic moduli of the simulated crystalline and amorphous films. Computer images of local pressure distributions and configuration snapshots show that plastic deformation in the film extends to regions far from the actual indent. (C) 2003 American Institute of Physics.

引用

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页码：118 / 120

页数：3

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