A 60 GHz transformer-based variable-gain power amplifier in 90nm CMOS

被引：1
|
作者：
Brinkhoff, James [1 ]
Kang, Kai [1 ]
Pham, Duy-Dong [1 ]
Lin, Fujiang [1 ]
机构：
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
CMOS millimeter-wave integrated circuits; power amplifiers; transformers; DESIGN;
D O I：
10.1109/RFIT.2009.5383671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A power amplifier, suitable for short-range 60 GHz applications, is designed. The amplifier features two differential stages, using transformers for single-ended to differential conversion, impedance matching and inter-stage coupling. The amplifier makes use of unilateralization in order to improve stability and increase the ratio between minimum and maximum gain. The amplifier has variable gain from -3 dB to 10 dB, with a center frequency of 58.5 GHz and an bandwidth of 6.3 GHz. In the maximum gain state, the output -1dB compression point is +5.1 dBm, P-sat is +8.5 dBm and the peak PAE is 7.7%, drawing 52 mA from a 1 V supply.
引用
收藏
页码：60 / 63
页数：4
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