Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance

被引：2

作者：

Czerwinski, A. ^{[1
]}

Pluska, M. ^{[1
]}

Ratajczak, J. ^{[1
]}

Szerling, A. ^{[1
]}

Katcki, J. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

JOURNAL OF MICROSCOPY | 2010年 / 237卷 / 03期

关键词：

Cathodoluminescence; lasers; semiconductors; TRANSPORT;

D O I：

10.1111/j.1365-2818.2009.03248.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.

引用

页码：304 / 307

页数：4

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