Phase separation phenomena in Sn-Sb-Se glassy semiconductors

被引:9
|
作者
Kumar, P. [1 ]
Kumar, J. [1 ]
Thangaraj, R. [1 ]
机构
[1] Guru Nanak Dev Univ, Dept Appl Phys, Semicond Lab, Amritsar 143005, Punjab, India
来源
关键词
ACTIVATION-ENERGY; CHALCOGENIDE; CRYSTALLIZATION; TEMPERATURE; KINETICS;
D O I
10.1051/epjap:2007054
中图分类号
O59 [应用物理学];
学科分类号
摘要
Differential scanning calorimetric (DSC) and X-ray diffraction (XRD) measurements on Sn-Sb-Se glassy semiconductors have been performed. Phase separation has been revealed with the broadening of the exothermic peak for 11 at% of Sn. The X-ray diffraction studies of annealed samples show that the investigated system could be treated as a solid solution of Sb2Se3 and SnSe2 phases. The deconvolution procedure was used to investigate the crystallization mechanism for the broad exothermic peaks in the thermal scans. From the heating rate dependence of the crystallization temperature, the crystallization parameters have been determined using Kissinger equation and Matusita equation. The investigated parameters indicate higher thermal stability and glass forming ability of Sn10Sb20Se70 chalcogenide glass.
引用
收藏
页码:1 / 5
页数:5
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