Kinetics of nonisothermal crystallization in Sn10Sb20−xBixSe70 glassy semiconductors

被引：0
|
作者：
M. Ahmad
P. Kumar
N. Suri
J. Kumar
R. Thangaraj
机构：
[1] Guru Nanak Dev University,Semiconductors Laboratory, Department of Applied Physics
来源：
Applied Physics A | 2009年 / 94卷
关键词：
61.43.Fs; 64.70.Pf; 68.60.Dv;
D O I：
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学科分类号：
摘要：
The crystallization kinetics of Sn10Sb20−xBix Se70 (x=0,2,4,6,8) chalcogenide system has been studied. Crystallization studies using differential scanning calorimetry under nonisothermal conditions with different heating rates are reported. The glass transition temperature is found to increase with the increase in heating rate as well as with the addition of bismuth. The apparent activation energy for glass transition and that for crystallization have been determined using the Kissinger equation. Thermal stability and glass forming tendency have also been studied.
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页码：933 / 937
页数：4
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