Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

被引：20
|
作者：
Urbanczyk, A. [1 ]
Hamhuis, G. J. [1 ]
Noetzel, R. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期
关键词：
gallium arsenide; III-V semiconductors; indium; indium compounds; molecular beam epitaxial growth; nanostructured materials; self-assembly; semiconductor quantum dots; surface plasmons; LUMINESCENCE;
D O I：
10.1063/1.3358122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.
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页数：3
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