Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

被引：20
|
作者：
Urbanczyk, A. [1 ]
Hamhuis, G. J. [1 ]
Noetzel, R. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期
关键词：
gallium arsenide; III-V semiconductors; indium; indium compounds; molecular beam epitaxial growth; nanostructured materials; self-assembly; semiconductor quantum dots; surface plasmons; LUMINESCENCE;
D O I：
10.1063/1.3358122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Tunnel-coupled quantum dots: Atomistic theory of quantum dot molecules and arrays
    Bryant, GW
    Aizpurua, J
    Jaskolski, W
    Zielinski, M
    QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 5 - 10
  • [32] Simulations of the spontaneous emission of a quantum dot near a gap plasmon waveguide
    Perera, Chamanei S.
    Vernon, Kristy C.
    Mcleod, Angus
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (05)
  • [33] Simulations of the spontaneous emission of a quantum dot near a gap plasmon waveguide
    Perera, C.S. (cp.hettiarachchige@qut.edu.au), 1600, American Institute of Physics Inc. (115):
  • [34] Correlated photon emission in a thick barrier coupled quantum dot
    Yamauchi, Shohgo
    Shikanai, Amane
    Morohashi, Isao
    Furue, Shigenori
    Komori, Kazuhiro
    Sugaya, Takeyoshi
    Takagahara, Toshihide
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
  • [35] Quantum Dot Emission Driven by Mie Resonances in Silicon Nanostructures
    Rutckaia, Viktoriia
    Heyrot, Frank
    Novikov, Alexey
    Shaleev, Mikhail
    Petrov, Mihail
    Schilling, Joerg
    NANO LETTERS, 2017, 17 (11) : 6886 - 6892
  • [36] Light emission from silicon nanocrystals: Probing a single quantum dot
    Sychugov, I
    Juhasz, R
    Valenta, J
    Zhang, A
    Pirouz, P
    Linnros, J
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5249 - 5253
  • [37] Electrically driven single InGaN/GaN quantum dot emission
    Jarjour, Anas F.
    Taylor, Robert A.
    Oliver, Rachel A.
    Kappers, Menno J.
    Humphreys, Colin J.
    Tahraoui, Abbes
    APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [38] Plasmon-mediated emergence of collective emission and enhanced quantum efficiency in quantum dot films
    Praveena, M.
    Mukherjee, Arnab
    Venkatapathi, Murugesan
    Basu, J. K.
    PHYSICAL REVIEW B, 2015, 92 (23)
  • [39] Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells
    Nagarajan, S.
    Ali, M.
    Jussila, H.
    Mattila, P.
    Aierken, A.
    Sopanen, M.
    Lipsanen, H.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 972 - 974
  • [40] Groove-coupled InGaAs/GaAs quantum dot laser/waveguide on silicon
    Yang, Jun
    Mi, Zetian
    Bhattacharya, Pallab
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 25 (07) : 1826 - 1831
12345