Solution-processed organic thin-film phototransistors based on donor/acceptor dyad

被引：12
|
作者：
Saragi, Tobat P. I. [1 ]
Fetten, Michael [1 ]
Salbeck, Josef [1 ]
机构：
[1] Univ Kassel, Ctr Interdisciplinary Nanostruct Sci & Technol, Dept Sci, D-34109 Kassel, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期
关键词：
D O I：
10.1063/1.2750387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on solution-processed organic thin-film phototransistors based on donor/acceptor dyad. The drain current increases significantly and the switch-on voltage is shifted toward positive bias as the incident light intensity is raised. Photoconductivity and the photovoltaic effect are assumed to be the underlying mechanism. Maximum responsivities of 0.3 and 0.03 A/W were obtained under irradiation at 370 nm at an incident light intensity of 1.4 mu W/cm(2) and irradiation using a tungsten halogen lamp at an incident light intensity of 0.32 mW/cm(2), respectively.(c) 2007 American Institute of Physics.
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