EXTRACTION OF D31 PIEZOELECTRIC COEFFICIENT OF ALN THIN FILM

被引:6
|
作者
Narayanan, Bhadri K. N. [1 ]
Nair, Deleep R. [1 ]
DasGupta, Amitava [1 ]
机构
[1] Indian Inst Technol Madras, Ctr NEMS & Nanophoton, Chennai, Tamil Nadu, India
关键词
Thin film piezoelectric on Silicon (TPoS) MEMS Resonator; piezoelectric coupling coefficient; Q-factor; Insertion loss; Motional resistance;
D O I
10.1109/MEMS51782.2021.9375172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Piezoelectric materials have the property of electro-mechanical coupling, which is very useful in Micro Electro Mechanical Systems (MEMS). Aluminium Nitride (AlN) thin film is an ideal candidate for resonators in on-chip front end circuit. The piezoelectric coupling coefficient d(31) is responsible for the excitation in longitudinal mode resonators. Direct measurement of the value of d(31) is still an area of research. We propose a method to extract the piezoelectric coefficient d(31) from the transmission characteristics of a resonator. The average extracted value of d(31) is -0.943 pC/N with standard deviation 0.21 pC/N, which is comparable with reported values.
引用
收藏
页码:623 / 625
页数:3
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