EXTRACTION OF D31 PIEZOELECTRIC COEFFICIENT OF ALN THIN FILM

被引:6
|
作者
Narayanan, Bhadri K. N. [1 ]
Nair, Deleep R. [1 ]
DasGupta, Amitava [1 ]
机构
[1] Indian Inst Technol Madras, Ctr NEMS & Nanophoton, Chennai, Tamil Nadu, India
关键词
Thin film piezoelectric on Silicon (TPoS) MEMS Resonator; piezoelectric coupling coefficient; Q-factor; Insertion loss; Motional resistance;
D O I
10.1109/MEMS51782.2021.9375172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Piezoelectric materials have the property of electro-mechanical coupling, which is very useful in Micro Electro Mechanical Systems (MEMS). Aluminium Nitride (AlN) thin film is an ideal candidate for resonators in on-chip front end circuit. The piezoelectric coupling coefficient d(31) is responsible for the excitation in longitudinal mode resonators. Direct measurement of the value of d(31) is still an area of research. We propose a method to extract the piezoelectric coefficient d(31) from the transmission characteristics of a resonator. The average extracted value of d(31) is -0.943 pC/N with standard deviation 0.21 pC/N, which is comparable with reported values.
引用
收藏
页码:623 / 625
页数:3
相关论文
共 50 条
  • [21] Fabrication of piezoelectric AlN thin film for FBARs
    Liu Wei-Kuo
    Tay Kok-Wan
    Kuo Sin-Cha
    Wu Menq-Jion
    SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2009, 52 (02): : 226 - 232
  • [22] Fabrication of piezoelectric AlN thin film for FBARs
    Wei-Kuo Liu
    Kok-Wan Tay
    Sin-Cha Kuo
    Menq-Jion Wu
    Science in China Series G: Physics, Mechanics and Astronomy, 2009, 52 : 226 - 232
  • [23] Preparation Technique of AlN Piezoelectric Thin Film
    Yin, Guanbo
    Imran, S.
    Ma, Yungui
    PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2014, : 1604 - 1607
  • [24] Fabrication of piezoelectric AlN thin film for FBARs
    TAY Kok-Wan
    KUO Sin-Cha
    WU Menq-Jion
    Science China(Physics,Mechanics & Astronomy), 2009, (02) : 226 - 232
  • [25] A silicon cantilever beam structure for the evaluation of d31, d33 and e31 piezoelectric coefficients of PZT thin films
    Herdier, Romain
    Jenkins, David
    Remiens, Denis
    Dupont, M.
    Osmont, D.
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 722 - +
  • [26] Determination of d31 Piezoelectric Constant via Lumped Element Analysis
    Al Ahmad, Mahmoud
    IEEE SENSORS JOURNAL, 2024, 24 (12) : 18948 - 18954
  • [27] Energy harvesting properties of the d31 type piezoelectric cantilever harvester
    Xu, Dongyu
    Hu, Yan
    Bu, Xianlong
    Chen, Huaicheng
    Jia, Hongyu
    JOURNAL OF ELECTROCERAMICS, 2023, 51 (03) : 221 - 229
  • [28] Estimation of the effective d31 coefficients of the piezoelectric layer in rainbow actuators
    Schwartz, RW
    Cross, LE
    Wang, QM
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2001, 84 (11) : 2563 - 2569
  • [29] High piezoelectric d31 coefficient and high Tc in PMW-PNN-PZT ceramics sintered at low temperature
    Yoo, Juhyun
    Kim, Yongjin
    Cho, Hongyeon
    Jeong, Yeong-Ho
    SENSORS AND ACTUATORS A-PHYSICAL, 2017, 255 : 160 - 165
  • [30] Influence of the crystallographic orientation of Pb(Zr,Ti)O3 films on the transverse piezoelectric coefficient d31
    Cueff, M.
    Allain, M.
    Abergel, J.
    Le Rhun, G.
    Aid, M.
    Defay, E.
    Faralli, D.
    2011 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2011, : 1948 - 1951