EXTRACTION OF D31 PIEZOELECTRIC COEFFICIENT OF ALN THIN FILM

被引:6
|
作者
Narayanan, Bhadri K. N. [1 ]
Nair, Deleep R. [1 ]
DasGupta, Amitava [1 ]
机构
[1] Indian Inst Technol Madras, Ctr NEMS & Nanophoton, Chennai, Tamil Nadu, India
关键词
Thin film piezoelectric on Silicon (TPoS) MEMS Resonator; piezoelectric coupling coefficient; Q-factor; Insertion loss; Motional resistance;
D O I
10.1109/MEMS51782.2021.9375172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Piezoelectric materials have the property of electro-mechanical coupling, which is very useful in Micro Electro Mechanical Systems (MEMS). Aluminium Nitride (AlN) thin film is an ideal candidate for resonators in on-chip front end circuit. The piezoelectric coupling coefficient d(31) is responsible for the excitation in longitudinal mode resonators. Direct measurement of the value of d(31) is still an area of research. We propose a method to extract the piezoelectric coefficient d(31) from the transmission characteristics of a resonator. The average extracted value of d(31) is -0.943 pC/N with standard deviation 0.21 pC/N, which is comparable with reported values.
引用
收藏
页码:623 / 625
页数:3
相关论文
共 50 条
  • [1] CANTILEVER METHOD FOR DETERMINATION OF d31 COEFFICIENT IN THIN PIEZOELECTRIC FILMS
    Penic, Samo
    Aljancic, Uros
    Resnik, Drago
    Vrtacnik, Danilo
    Mozek, Matej
    Amon, Slavko
    INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 2008, 38 (02): : 81 - 88
  • [2] CANTILEVER METHOD FOR DETERMINATION OF D31 COEFFICIENT IN THIN PIEZOELECTRIC FILMS
    Penic, Samo
    Aljancic, Uros
    Resnik, Drago
    Vrtacnik, Danilo
    Mozek, Matej
    Amon, Slavko
    INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 2009, 39 (02): : 85 - 92
  • [3] The influence of film thickness on the magnitude and aging behavior of the transverse piezoelectric coefficient (d31) of PZT thin films
    Shepard, JF
    Chu, F
    Moses, PJ
    Trolier-McKinstry, S
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 415 - 420
  • [4] Wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films
    The Pennsylvania State Univ, University Park, United States
    Sens Actuators A Phys, 1-2 (133-138):
  • [5] Characterization and aging response of the d31 piezoelectric coefficient of lead zirconate titanate thin films
    Shepard, JF
    Chu, F
    Kanno, I
    Trolier-McKinstry, S
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6711 - 6716
  • [6] The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films
    Shepard, JF
    Moses, PJ
    Trolier-McKinstry, S
    SENSORS AND ACTUATORS A-PHYSICAL, 1998, 71 (1-2) : 133 - 138
  • [7] SIMULATING THE EFFECTS OF POROSITY ON THE D31 PIEZOELECTRIC COEFFICIENT OF POLYVINYLIDENE FLUORIDE
    Kloster, Jack
    Danley, Matthew
    Struntz, Tony
    Lai, Victor
    Zhao, Ping
    PROCEEDINGS OF ASME 2022 CONFERENCE ON SMART MATERIALS, ADAPTIVE STRUCTURES AND INTELLIGENT SYSTEMS, SMASIS2022, 2022,
  • [8] FREQUENCY-DEPENDENCE OF THE PIEZOELECTRIC D31 COEFFICIENT AS A FUNCTION OF CERAMIC TETRAGONALITY
    VICENTE, JM
    JIMENEZ, B
    FERROELECTRICS, 1992, 134 (1-4) : 157 - 162
  • [9] The significance of the piezoelectric coefficient d31,eff determined from cantilever structures
    Dekkers, M.
    Boschker, H.
    van Zalk, M.
    Nguyen, M.
    Nazeer, H.
    Houwman, E.
    Rijnders, G.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (02)
  • [10] Measurement of piezoelectric constant d31 with piezoelectric bimorphs
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 2000, 22 (03): : 203 - 205