The discovery and development of structures using the spin dependence of conduction electrons has led to products and product developments in recording heads and nonvolatile memory. It has also led to the introduction of several new products which sense magnetic fields using these new structures. This article describes giant magnetoresistance and magnetic tunnel junction structures and how they are used in several applications.
机构:
Ecole Polytech, Phys Mat Condensee Lab, CNRS, UMR 7643, F-91128 Palaiseau, FranceEcole Polytech, Phys Mat Condensee Lab, CNRS, UMR 7643, F-91128 Palaiseau, France