Spin-dependent sensors

被引：26
|
作者：
Daughton, J [1 ]
机构：
[1] NVE Corp, Eden Prairie, MN 55344 USA
来源：
PROCEEDINGS OF THE IEEE | 2003年 / 91卷 / 05期
关键词：
giant magnetoresistance (GMR); isolator; magnetic tunnel junction (MTJ); magnetization pinning; multilayer; spin; spin valve; synthetic antiferromagnet; tunneling magnetoresistance;
D O I：
10.1109/JPROC.2003.811806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The discovery and development of structures using the spin dependence of conduction electrons has led to products and product developments in recording heads and nonvolatile memory. It has also led to the introduction of several new products which sense magnetic fields using these new structures. This article describes giant magnetoresistance and magnetic tunnel junction structures and how they are used in several applications.
引用
收藏
页码：681 / 686
页数：6
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