Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters

被引：1
|
作者：
Cheng, Hong [1 ,2 ]
Xiao, Juncheng [2 ]
Lin, Xinnan [1 ]
机构：
[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] TCL China Star Optoelect Technol Co Ltd, Array Technol Dev Dept, Shenzhen 518055, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷
关键词：
Ultraviolet radiation; hydrogenated LTPS-TFTs; threshold voltage; UV dosimeters; THIN-FILM TRANSISTORS; LEAKAGE CURRENT; ELECTRICAL-PROPERTIES; RADIATION; OXIDE; PERFORMANCE; INSTABILITY;
D O I：
10.1109/JEDS.2021.3085193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
N-channel thin film transistors (TFTs) fabricated with hydrogenated low temperature polycrystalline silicon (LTPS) were exposed to ultraviolet (UV) radiation to a cumulative dose up to 16 J/cm(2). The effect of radiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage (Vth) which was found to have exponentially linear dependence on irradiation dose. This, together with obtained low fading, suggests that hydrogenated n-channel low temperature polycrystalline silicon TFTs have potential as UV radiation dosimeters. In addition, the physical mechanisms of the UV induced electrical degradation were analyzed in terms of the radiation generated traps at poly-Si grain boundary and poly-Si and gate oxide insulator (poly-Si/SiO2) interface.
引用
下载
收藏
页码：599 / 605
页数：7
相关论文
共 50 条
  • [41] MECHANISM OF DEVICE DEGRADATION IN N-CHANNEL AND P-CHANNEL POLYSILICON TFTS BY ELECTRICAL STRESSING
    WU, IW
    JACKSON, WB
    HUANG, TY
    LEWIS, AG
    CHIANG, A
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) : 167 - 169
  • [42] Electrical properties of low-temperature-compatible p-channel polycrystalline-silicon TFTs using high-κ gate dielectrics
    Yang, Ming-Jui
    Chien, Chao-Hsin
    Lu, Yi-Hsien
    Shen, Chih-Yen
    Huang, Tiao-Yuan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (04) : 1027 - 1034
  • [43] Short Channel Effects in Double Gate Polycrystalline Silicon SLS ELA TFTs
    Moschou, D. C.
    Kouvatsos, D. N.
    Pappas, I.
    Dimitriadis, C.
    Voutsas, A. T.
    2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), 2012, : 91 - 94
  • [44] Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory
    Yeh, Mu-Shih
    Wu, Yung-Chun
    Chung, Ming-Hsien
    Jhan, Yi-Ruei
    Chang-Liao, Kuei-Shu
    Liu, Kuan-Cheng
    Wu, Min-Hsin
    Hung, Min-Feng
    APPLIED PHYSICS LETTERS, 2014, 105 (04)
  • [45] N-shot SLS-processed polycrystalline silicon TFTs
    Crowder, MA
    Moriguchi, M
    Mitani, Y
    Voutsas, AT
    POLY-SILICON THIN FILM TRANSISTOR TECHNOLOGY AND APPLICATIONS IN DISPLAYS AND OTHER NOVEL TECHNOLOGY AREAS, 2003, 5004 : 44 - 51
  • [46] A STABLE N-CHANNEL INDIUM-PHOSPHIDE FIELD-EFFECT TRANSISTOR WITH AN AMORPHOUS HYDROGENATED SILICON GATE
    RODITI, E
    ILIADIS, AA
    CHRISTOU, A
    APPLIED PHYSICS LETTERS, 1989, 55 (10) : 999 - 1001
  • [47] High mobility non-hydrogenated low temperature polysilicon TFTs
    Plais, F.
    Legagneux, P.
    Kretz, T.
    Stroh, R.
    Huet, O.
    Pribat, D.
    Materials Research Society Symposium - Proceedings, 1994, 345 : 87 - 92
  • [48] Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
    Farmakis, FV
    Brini, J
    Kamarinos, G
    Dimitriadis, CA
    Gueorguiev, VK
    Ivanov, TE
    MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) : 885 - 889
  • [49] Growth of polycrystalline silicon at low temperature on hydrogenated microcrystalline silicon (μc-Si:H) seed layer
    Park, WS
    Jang, YH
    Takeya, M
    Jong, GS
    Ohmi, T
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 403 - 408
  • [50] Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
    Farmakis, F.V.
    Brini, J.
    Kamarinos, G.
    Dimitriadis, C.A.
    Gueorguiev, V.K.
    Ivanov, Tz.E.
    Microelectronics Reliability, 39 (6-7): : 885 - 889
12345