Epitaxial growth of high quality cubic MgZnO films on MgO substrate

被引：31

作者：

Wang, L. K. ^{[1
,2
]}

Ju, Z. G. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Zheng, J. ^{[1
,2
]}

Li, B. H. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Yao, B. ^{[1
]}

Zhao, D. X. ^{[1
]}

Shen, D. Z. ^{[1
]}

Zhang, J. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 07期

基金：

中国国家自然科学基金;

关键词：

X-ray diffraction; Cubic structure; Atomic force microscopy; Smooth surface; Metalorganic chemical vapor deposition; MgZnO films; THIN-FILMS; HETEROEPITAXIAL GROWTH; ROOM-TEMPERATURE; ZNO; DEPOSITION; MGXZN1-XO;

D O I：

10.1016/j.jcrysgro.2010.01.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of cubic Mg0.33Zn0.O-67 films on MgO (1 0 0) substrate by metalorganic chemical vapor deposition (MOCVD) was reported. X-ray diffraction (XRD) omega-scans and phi-scans demonstrate the films exhibit single (2 0 0) orientation and highly uniform in-plane orientation with four-fold symmetry. The epitaxial relationship between the layer and substrate is MgZnO (1 0 0)//MgO (1 00). Smooth surface with the rms roughness of 1.8 nm in 5 x 5 mu m area is obtained. Atomic force microscopy (AFM) reveals formation of islands attributed to the strain in the epitaxial MgZnO films. These results demonstrate the high quality single crystal Mg0.33Zn0.67O films and their potential in high-performance deep ultraviolet optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：875 / 877

页数：3

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