Epitaxial growth of high quality cubic MgZnO films on MgO substrate

被引：31

作者：

Wang, L. K. ^{[1
,2
]}

Ju, Z. G. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Zheng, J. ^{[1
,2
]}

Li, B. H. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Yao, B. ^{[1
]}

Zhao, D. X. ^{[1
]}

Shen, D. Z. ^{[1
]}

Zhang, J. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 07期

基金：

中国国家自然科学基金;

关键词：

X-ray diffraction; Cubic structure; Atomic force microscopy; Smooth surface; Metalorganic chemical vapor deposition; MgZnO films; THIN-FILMS; HETEROEPITAXIAL GROWTH; ROOM-TEMPERATURE; ZNO; DEPOSITION; MGXZN1-XO;

D O I：

10.1016/j.jcrysgro.2010.01.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of cubic Mg0.33Zn0.O-67 films on MgO (1 0 0) substrate by metalorganic chemical vapor deposition (MOCVD) was reported. X-ray diffraction (XRD) omega-scans and phi-scans demonstrate the films exhibit single (2 0 0) orientation and highly uniform in-plane orientation with four-fold symmetry. The epitaxial relationship between the layer and substrate is MgZnO (1 0 0)//MgO (1 00). Smooth surface with the rms roughness of 1.8 nm in 5 x 5 mu m area is obtained. Atomic force microscopy (AFM) reveals formation of islands attributed to the strain in the epitaxial MgZnO films. These results demonstrate the high quality single crystal Mg0.33Zn0.67O films and their potential in high-performance deep ultraviolet optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：875 / 877

页数：3

共 50 条

[21] Structure and surface morphology of epitaxial Ni films on MgO(111) and (001) substrates: Growth of high quality single domain films
Sandstrom, P
Svedberg, EB
Birch, J
Sundgren, JE
MECHANISMS AND PRINCIPLES OF EPITAXIAL GROWTH IN METALLIC SYSTEMS, 1998, 528 : 209 - 217
[22] Epitaxial growth of Pd1-xFex films on MgO single-crystal substrate
Esmaeili, A.
Yanilkin, I., V
Gumarov, A., I
Vakhitov, I. R.
Gabbasov, B. F.
Kiiamov, A. G.
Rogov, A. M.
Osin, Yu N.
Denisov, A. E.
Yusupov, R., V
Tagirov, L. R.
THIN SOLID FILMS, 2019, 669 : 338 - 344
[23] Effect of growth temperature on UV absorption characteristics and growth orientation of cubic MgZnO films
Peng, Sai
Lyu, You-Ming
Han, Shun
Cao, Pei-Jiang
Liu, Wen-Jun
Zeng, Yu-Xiang
Jia, Fang
Zhu, De-Liang
Faguang Xuebao/Chinese Journal of Luminescence, 2014, 35 (08): : 939 - 944
[24] Growth and surface morphology:: epitaxial MgO films and the Ag(1,1,19) substrate
Kramer, J
Tegenkamp, C
Ernst, W
Pfnür, H
SURFACE SCIENCE, 2003, 537 (1-3) : 265 - 275
[25] Growth of epitaxial TiN films on MgO(100) by high current discharge plasma
1600, (72):
[26] Epitaxial growth of cubic Mg0.45Zn0.55O thin films on SrTiO3 (001) substrate with MgO buffer layer
Zhu, Dapeng
Cai, Li
He, Shumin
Liu, Guolei
Yan, Shishen
Cao, Qiang
Chen, Yanxue
Kang, Shishou
Mei, Liangmo
Gao, Shang
Lian, Jie
JOURNAL OF CRYSTAL GROWTH, 2013, 377 : 78 - 81
[27] Optical properties of cubic MgZnO thin films
Chen, J
Shen, WZ
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 321 - 324
[28] LOCAL EPITAXIAL-GROWTH OF CUO FILMS ON MGO
CATANA, A
LOCQUET, JP
PAIK, SM
SCHULLER, IK
PHYSICAL REVIEW B, 1992, 46 (23): : 15477 - 15483
[29] Epitaxial growth of high quality AlN films on Si substrates
Yang, Meijuan
Wang, Wenliang
Lin, Yunhao
Yang, Weijia
Li, Guoqiang
MATERIALS LETTERS, 2016, 182 : 277 - 280
[30] Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate
Lee, MK
Shih, TH
Tsay, BT
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (12) : 1030 - 1032

← 1 2 3 4 5 →