Epitaxial growth of ferromagnetic cubic GaCrN on MgO substrate

被引：6

作者：

Kimura, S ^{[1
]}

Subashchandran, S ^{[1
]}

Zhou, YK ^{[1
]}

Kim, MS ^{[1
]}

Kobayashi, S ^{[1
]}

Emura, S ^{[1
]}

Ishimaru, M ^{[1
]}

Hirotsu, Y ^{[1
]}

Hasegawa, S ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 1A期

关键词：

GaCrN; cubic; ferromagnetic semiconductor; molecular-beam epitaxy; reflection high-energy electron diffraction; secondary ion mass spectroscopy; X-ray diffraction; transmission electron microscope;

D O I：

10.1143/JJAP.45.76

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cubic GaCrN films were synthesized on MgO(001) substrates using plasma-assisted molecular-beam epitaxy, and room-temperature ferromagnetism was observed. It is suggested that these samples show more single cubic phases than those grown on Al2O3(0001) substrates. The influences of V/III ratio and Cr cell temperature on the properties of the grown GaCrN films were characterized extensively. The V/III ratio which controls the Cr incorporation in the GaCrN thin films was one of the key parameters. The Cr incorporation was larger in the GaCrN films grown under N-rich conditions than those under Ga-rich conditions. Moreover, a Ga4Cr secondary phase was also seen in the GaCrN film when it was grown under Ga-rich conditions. High-concentration Cr doping resulted in the formation of a CrN secondary phase.

引用

页码：76 / 78

页数：3

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