Scanning tunneling microscopy images of III-V semiconductor alloys: Strain effects

被引：7
|
作者：
McKay, HA [1 ]
Chen, HJ
Feenstra, RM
Poole, PJ
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期
关键词：
D O I：
10.1116/1.1529651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning tunneling microscope. images of. lattice-matched InGaAs/InP structures were investigated using autocorrelation analysis. Correlation lengths and correlation amplitudes were calculated from constant-current empty-state images. Theoretical STM images were calculated from a model which only considered surface displacements due to strain relaxation. By comparing model and experimental correlation lengths and amplitudes it is concluded that contrast variations. in constant-current images are dominated by strain relaxation effects. Changes in probe tip geometry and. applications of this technique to study clustering in III-V alloys are also discussed. (C) 2003 American Vacuum Society.
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收藏
页码：18 / 22
页数：5
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