Scanning tunneling microscopy images of III-V semiconductor alloys: Strain effects

被引：7
|
作者：
McKay, HA [1 ]
Chen, HJ
Feenstra, RM
Poole, PJ
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期
关键词：
D O I：
10.1116/1.1529651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning tunneling microscope. images of. lattice-matched InGaAs/InP structures were investigated using autocorrelation analysis. Correlation lengths and correlation amplitudes were calculated from constant-current empty-state images. Theoretical STM images were calculated from a model which only considered surface displacements due to strain relaxation. By comparing model and experimental correlation lengths and amplitudes it is concluded that contrast variations. in constant-current images are dominated by strain relaxation effects. Changes in probe tip geometry and. applications of this technique to study clustering in III-V alloys are also discussed. (C) 2003 American Vacuum Society.
引用
收藏
页码：18 / 22
页数：5
相关论文
共 50 条
  • [21] Surface segregation and ordering in III-V semiconductor alloys
    Froyen, S
    Zunger, A
    PHYSICAL REVIEW B, 1996, 53 (08): : 4570 - 4579
  • [22] Magnetoquantum effects in III-V tunneling heterostructures
    Phys Rev B, 3 (1447):
  • [23] Magnetoquantum effects in III-V tunneling heterostructures
    Chan, KS
    Sheard, FW
    Toombs, GA
    Eaves, L
    PHYSICAL REVIEW B, 1997, 56 (03): : 1447 - 1455
  • [24] Band-to-band tunneling in III-V semiconductor heterostructures
    Van de Put, Maarten
    2013 IEEE EUROCON, 2013, : 2134 - 2139
  • [25] MECHANISMS OF STRAIN RELAXATION IN III-V SEMICONDUCTOR HETEROSTRUCTURES
    MAZZER, M
    ROMANATO, F
    DRIGO, AV
    CARNERA, A
    JOURNAL OF CRYSTAL GROWTH, 1993, 126 (01) : 125 - 132
  • [26] Anisotropy of strain relaxation in III-V semiconductor heterostructures
    Yastrubchak, O
    Wosinski, T
    Domagala, JZ
    Lusakowska, E
    DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII, 2004, 230 : 93 - 100
  • [27] Comparison between ab initio theory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors
    Engels, B
    Richard, P
    Schroeder, K
    Blugel, S
    Ebert, P
    Urban, K
    PHYSICAL REVIEW B, 1998, 58 (12) : 7799 - 7815
  • [28] SCANNING TUNNELING MICROSCOPY IMAGES OF CARBURIZED NICKEL-ALLOYS
    HARADA, S
    GODA, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 308 - 310
  • [29] Valence band anticrossing in mismatched III-V semiconductor alloys
    Alberi, K.
    Wu, J.
    Walukiewicz, W.
    Yu, K. M.
    Dubon, O. D.
    Watkins, S. P.
    Wang, C. X.
    Liu, X.
    Cho, Y. -J.
    Furdyna, J. K.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1711 - +
  • [30] Spontaneous lateral composition modulation in III-V semiconductor alloys
    Millunchick, JM
    Twesten, RD
    Lee, SR
    Follstaedt, DM
    Jones, ED
    Ahrenkiel, SP
    Zhang, Y
    Cheong, HM
    Mascarenhas, A
    MRS BULLETIN, 1997, 22 (07) : 38 - 43
12345