Early stage of tin oxide film growth in chemical vapor deposition

被引：20
|
作者：
Matsui, Y [1 ]
Mitsuhashi, M [1 ]
Goto, Y [1 ]
机构：
[1] Asahi Glass Co Ltd, New Prod Dev Ctr, Fabr Glass Div, Kanagawa 2430301, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 169卷
关键词：
nucleation; atomic force microscopy; atmospheric pressure chemical vapor deposition; Tin oxide;
D O I：
10.1016/S0257-8972(03)00205-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Early stage of film growth was studied for chemical vapor deposition tin oxide films. Nucleation of films was observed by using an atomic force microscope. It was found nucleation structure of the crystallites changed from isolated island-like to tightly interconnected as methanol concentration into source gases increased. (C) 2003 Elsevier Science B.V. All tights reserved.
引用
收藏
页码：549 / 552
页数：4
相关论文
共 50 条
  • [41] Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy
    Bermudez, VM
    DeSisto, WJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (02): : 576 - 583
  • [42] Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon
    Wu, B
    Cohen, PI
    Feldman, LC
    Zhang, ZY
    APPLIED PHYSICS LETTERS, 2004, 84 (12) : 2175 - 2177
  • [43] Growth of tin oxide thick films by plasma spray physical vapor deposition
    Iizuka, Kazuyuki
    Kambara, Makoto
    Yoshida, Toyonobu
    SENSORS AND ACTUATORS B-CHEMICAL, 2011, 155 (02): : 551 - 556
  • [44] Chemical vapor deposition of TiN for ULSI applications
    Eizenberg, M
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 325 - 335
  • [45] Correlation between the early stage of copper metal organic chemical vapor deposition and the material properties of thin film
    Hwang, ES
    Lee, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3015 - 3020
  • [46] GROWTH-CHARACTERISTICS AND PROPERTIES OF TIN COATING BY CHEMICAL-VAPOR-DEPOSITION
    CHENG, HE
    CHIANG, MJ
    HON, MH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) : 1573 - 1578
  • [47] TIN FILM FORMATION BY PLASMA CHEMICAL VAPOR-DEPOSITION AND ITS PLASMA DIAGNOSTICS
    ISHII, Y
    OHTSU, H
    ADACHI, T
    ICHIMURA, H
    KOBAYASHI, K
    SURFACE & COATINGS TECHNOLOGY, 1991, 49 (1-3): : 279 - 283
  • [48] Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition
    Lee, H. Y.
    Kim, J. N.
    Kim, Hun
    Jang, D. S.
    Lee, J. J.
    THIN SOLID FILMS, 2008, 516 (11) : 3538 - 3543
  • [49] Characterizations of GaN film growth by ECR plasma chemical vapor deposition
    Fu, Silie
    Chen, Junfang
    Zhang, Hongbin
    Guo, Chaofen
    Li, Wei
    Zhao, Wenfen
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) : 3325 - 3331
  • [50] Oblique angle initiated chemical vapor deposition for patterning film growth
    Welchert, Nicholas A.
    Cheng, Christine
    Karandikar, Prathamesh
    Gupta, Malancha
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (06):
12345