A study of ion implantation induced variation of crystalline phase of boron nitride

被引：0
|
作者：
Kumagai, M [1 ]
Ohkubo, M [1 ]
Ogata, K [1 ]
Higeta, K [1 ]
Shimoitani, Y [1 ]
Shimizu, Y [1 ]
Satou, M [1 ]
Setsuhara, Y [1 ]
Miyake, S [1 ]
机构：
[1] KANAGAWA HIGH TECHNOL FDN,TAKATSU KU,KAWASAKI,KANAGAWA 213,JAPAN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1081 / 1084
页数：4
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