SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter

被引：0
|
作者：
Miyake, Hiroki [1 ]
Kimoto, Tsunenobu [1 ]
Suda, Jun [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
Heterojunction bipolar transistor (HBT); heterojunction; current gain; common-emitter mode; band offset; CURRENT-GAIN; JUNCTION TRANSISTORS; FABRICATION; EPITAXY; GAN;
D O I：
10.4028/www.scientific.net/MSF.645-648.1029
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of beta similar to 2.7, whereas the HBT with an Al content below 0.5 showed beta similar to 0.1.
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收藏
页码：1029 / 1032
页数：4
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