SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter

被引：0

作者：

Miyake, Hiroki ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

Heterojunction bipolar transistor (HBT); heterojunction; current gain; common-emitter mode; band offset; CURRENT-GAIN; JUNCTION TRANSISTORS; FABRICATION; EPITAXY; GAN;

D O I：

10.4028/www.scientific.net/MSF.645-648.1029

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of beta similar to 2.7, whereas the HBT with an Al content below 0.5 showed beta similar to 0.1.

引用

页码：1029 / 1032

页数：4

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