A K-Band High-OP1dB Common-Drain Power Amplifier With Neutralization Technique in 90-nm CMOS Technology

被引：7
|
作者：
Chang, Yang [1 ,2 ]
Wang, Yunshan [1 ]
Wang, Huei [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Commun Engn, Dept Elect Engn, Taipei 106, Taiwan
[2] Realtek Semicond Corp, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2019年 / 29卷 / 12期
关键词：
CMOS; common-drain (CD); K-band; neutralization technique; power amplifier (PA);
D O I：
10.1109/LMWC.2019.2947247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a fully integrated K-band high output 1-dB compression point ( OP1dB) power amplifier (PA) fabricated in the 90-nm CMOS process. Common- drain (CD) structure is adopted to achieve high OP1dB. Since the CD structure suffers from the poor stability and power gain, the proposed neutralization technique for the CD amplifier is used to improve both of them simultaneously. The measured results of the proposed PA demonstrate the saturated output power ( Psat) of 22.9 dBm with 24.2% peak power-added efficiency (PAE), OP1dB of 22.5 dBm with 22.5% PAE. To the best of authors' knowledge, the proposed CD PA is the first CMOS CD PA above 10 GHz.
引用
收藏
页码：795 / 797
页数：3
相关论文
共 31 条
  • [1] A K-Band Power Amplifier with Adaptive Bias in 90-nm CMOS
    Liu, Jenny Yi-Chun
    Chan, Chin-Tung
    Hsu, Shawn S. H.
    2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1376 - 1379
  • [2] A K-Band Power Amplifier with Adaptive Bias in 90-nm CMOS
    Liu, Jenny Yi-Chun
    Chan, Chin-Tung
    Hsu, Shawn S. H.
    2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 432 - 435
  • [3] A K-Band Integrated Bandpass Filter in 90-nm CMOS Technology
    Sekar, Vikram
    Entesari, Kamran
    2011 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2011, : 122 - 125
  • [4] A V-band Power Amplifier with 11.9 dB Gain in CMOS 90-nm Process Technology
    Wu, Ming-Wei
    Chiang, Yen-Chung
    PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2012, : 19 - 21
  • [5] A K-Band Transformer Based Power Amplifier with 24.4-dBm Output Power and 28% PAE in 90-nm CMOS Technology
    Lin, Jung-Lin
    Lin, Yu-Hsuan
    Hsiao, Yuan-Hung
    Wang, Huei
    2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 31 - 34
  • [6] A K-Band Power Amplifier with 26-dBm Output Power and 34% PAE with Novel Inductance-based Neutralization in 90-nm CMOS
    Huang, Wei-Cheng
    Lin, Jung-Lin
    Lin, Yu-Hsuan
    Wang, Huei
    PROCEEDINGS OF THE 2018 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2018, : 228 - 231
  • [7] Design of a K-Band High-Efficiency Power Amplifier in 45 nm SOI CMOS Technology
    Chen, Liying
    Wang, Hao
    Zhao, Junfa
    Zhang, Simin
    INTEGRATED FERROELECTRICS, 2021, 217 (01) : 95 - 106
  • [8] Design of a 1.8-mW K-Band Low Noise Amplifier with 19.3-dB Gain and 3.3-dB Noise Figure in 90-nm CMOS
    Chang, Kai-Chun
    Wang, Yunshan
    Wang, Huei
    2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2021, : 4 - 6
  • [9] A V-band Low Noise Amplifier with 18.1 dB Gain and 6.3 dB NF in 90-nm CMOS Process Technology
    Hsu, Chiu-Hsiang
    Chiang, Yen-Chung
    PIERS 2013 STOCKHOLM: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2013, : 601 - 604
  • [10] A High-Psat High-OP1dB High-Power-Density Fully Integrated Ka-Band Power Amplifier in 0.18-μm CMOS
    Wang, To-Po
    Li, Zong-Wei
    Hsueh, Ching-Yung
    2012 IEEE INTERNATIONAL CONFERENCE ON WIRELESS INFORMATION TECHNOLOGY AND SYSTEMS (ICWITS), 2012,
1234