Improvement of linewidth enhancement factor in 1.55-μm multiple-quantum-well laser diodes

被引：0
|
作者：
Choo, HR [1 ]
O, BH
Park, CD
Kim, HM
Kim, JS
Oh, DK
Kim, HM
Pyun, KE
机构：
[1] Elect & Telecommun Res Inst, Optoelect Sect, Yusong 305600, Taejeon, South Korea
[2] Inha Univ, Dept Elect Mat & Devices Engn, Inchon 402751, South Korea
[3] Myungji Univ, Dept Elect Engn, Kyungki Do 449728, South Korea
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期
关键词：
complex-coupled laser diode; gain; linewidth enhancement factor; semiconductor lasers; spontaneous emission;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The improvement of the linewidth enhancement factor in complex-coupled laser diode (CC-LD), or loss-coupled, was confirmed by measuring the spontaneous emission spectra below threshold from the sidewall of laser diodes. In addition, the serial resistance of the device was measured. The linewidth enhancement factor is improved by the presence of a light absorbing InGaAs grating for loss coupled distributed-feedback (DFB) laser diode (LD). We report the comparison of the linewidth enhancement factors of Fabry-Perot (FP) LD, conventional DFB-LD, and loss coupled DFB-LD's.
引用
收藏
页码：645 / 647
页数：3
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