Modelling, design and fabrication of a novel reconfigurable ultra-wide-band impedance matching based on RF MEMS technology

被引：4

作者：

Jmai, Bassem ^{[1
]}

Dinis, Hugo ^{[2
]}

Anacleto, Pedro ^{[2
]}

Rajhi, Adnen ^{[3
]}

Mendes, Paulo M. ^{[2
]}

Gharsallah, Ali ^{[1
]}

机构：

[1] Fac Sci, Dept Phys, Microwave Elect Res Lab MERLab, Tunis, Tunisia

[2] Univ Minho, Dept Ind Elect, Microelectromech Syst Res Unit, Guimaraes, Portugal

[3] Carthage Natl Sch Engn, Dept Elect Engn, Lab Phys Soft Mat & EM Modelisat, Tunis, Tunisia

来源：

IET CIRCUITS DEVICES & SYSTEMS | 2019年 / 13卷 / 08期

关键词：

coplanar waveguides; microswitches; micromechanical devices; impedance matching; novel reconfigurable ultra-wide-band impedance; RF MEMS technology; adaptive impedance-matching network; tremendously reduced dimensions; fabrication process; radio-frequency microelectromechanical system device; coplanar waveguide design; suspended bridges; impedance tuning; variable applied DC voltage; operation mechanism; mechanical aspects; bridge gap manipulation; tuning capabilities; load impedances; resonant frequency;

D O I：

10.1049/iet-cds.2019.0116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study proposes an adaptive impedance-matching network with tremendously reduced dimensions and presents its fabrication process. The proposed radio-frequency micro-electromechanical system (RF MEMS) device is based on a coplanar waveguide design and relies on suspended bridges for impedance tuning. The tuning is controlled by a variable applied DC voltage to the bridges. Preliminary tests validate the device's operation mechanism, and simulations were performed on both the mechanical aspects of the device (bridge gap manipulation) and tuning capabilities. This device presents the possibility of operating in a wide band of frequencies, namely [1-6] GHz, and for load impedances in the interval of [30-90] omega for the real part and [-10-30] for the imaginary part. The device's resonant frequency and its bandwidth can be modified easily by changing the bridge gap in the RF MEMS.

引用

页码：1299 / 1304

页数：6

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