GaP((1)over-bar(1)over-bar(1)over-bar) reconstructed surface studied with STM and LEED

被引:10
|
作者
Hattori, K
Ishihara, K
Miyatake, Y
Matsui, F
Takeda, S
Daimon, H
Komori, F
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
关键词
gallium phosphide; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography; scanning tunneling microscopy; low energy electron diffraction (LEED);
D O I
10.1016/S0039-6028(02)02564-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied GaP((1) over bar(1) over bar(1) over bar) reconstructed clean surface with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). We found that the surface consists of six equivalent mirror-symmetric domains and each domain has stripe structure. The stripe directions tilt from three ((1) over bar(1) over bar2) directions clockwise and counterclockwise at the same angle, resulting in six domains. The stripe period and the tilt angle are 1.30 nm and 6.8degrees, respectively. Magnified STM images revealed that all stripes in one domain have the same protrusion unit along the stripe direction, and that the origin of the protrusion unit is arranged by two vectors for the inter-stripe direction. The same unit-vector in the stripe direction and the two unit-vectors in the inter-stripe direction constitute two different surface-reconstruction units, namely units 1 and 2. We assigned the reconstruction matrices of units 1 and 2 in one domain to ((2 5) (3 -1)) and ((2 5) (4 1)), respectively. A trial structure model assuming the same elements located at the protrusions well explains observed LEED patterns. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:57 / 65
页数:9
相关论文
共 50 条
  • [41] Evidence for the existence of ud(b)over-bar(b)over-bar and the nonexistence of ss(b)over-bar(b)over-bar and cc(b)over-bar(b)over-bar tetraquarks from lattice QCD
    Bicudo, Pedro
    Cichy, Krzysztof
    Peters, Antje
    Wagenbach, Bjoern
    Wagner, Marc
    PHYSICAL REVIEW D, 2015, 92 (01):
  • [42] Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy
    Ploch, Simon
    Frentrup, Martin
    Wernicke, Tim
    Pristovsek, Markus
    Weyers, Markus
    Kneissl, Michael
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (15) : 2171 - 2174
  • [43] A core level and valence band photoemission study of the (111) and ((1)over-bar (1)over-bar (1)over-bar) surfaces of 3C-SiC
    Glans, PA
    Balasubramanian, T
    Syväjärvi, M
    Yakimova, R
    Johansson, LI
    SURFACE SCIENCE, 2001, 470 (03) : 284 - 292
  • [44] Mass spectra for the cc(b)over-bar(b)over-bar and bb(c)over-bar(c)over-bar tetraquark states
    Wang, Qi-Nan
    Yang, Zi-Yan
    Chen, Wei
    Chen, Hua-Xing
    PHYSICAL REVIEW D, 2021, 104 (01)
  • [45] Fully-heavy tetraquarks: bb(c)over-bar (c)over-bar and bc(b)over-bar (c)over-bar
    Chen, Xiaoyun
    PHYSICAL REVIEW D, 2019, 100 (09)
  • [46] Growth of large (111) and ((1)over-bar(1)over-bar(1)over-bar) sodium bromate single crystals by Reverse Seeded Solution Growth method
    Reddy, Ch. Snehalatha
    Shekar, P. V. Raja
    Rao, K. Gopala Kishan
    Rao, K. Kishan
    MATERIALS LETTERS, 2010, 64 (05) : 640 - 642
  • [47] Possible heavy tetraquarks qQ(q)over-bar(Q)over-bar, qq(Q)over-barQ(Q)over-bar and qQ(Q)over-bar(Q)over-bar
    Cui Ying
    Chen Xiao-Lin
    Deng Wei-Zhen
    Zhu Shi-Lin
    HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2007, 31 (01): : 7 - 13
  • [48] InAs quantum dots grown on the GaAs(113)A and GaAs((1)over-bar(1)over-bar(1)over-bar)B surfaces:: A comparative STM study -: art. no. 165310
    Temko, Y
    Suzuki, T
    Kratzer, P
    Jacobi, K
    PHYSICAL REVIEW B, 2003, 68 (16)
  • [49] Temperature-mediated phase selection during growth of GaN on (111)A and ((1)over-bar(1)over-bar(1)over-bar)B GaAs substrates
    Yang, JW
    Kuznia, JN
    Chen, QC
    Khan, MA
    George, T
    DeGraef, M
    Mahajan, S
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3759 - 3761
  • [50] InAs quantum dots on the GaAs((5)over-bar (2)over-bar (11)over-bar)B surface
    Temko, Y
    Suzuki, T
    Xu, MC
    Jacobi, K
    APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3680 - 3682