InAs quantum dots grown on the GaAs(113)A and GaAs((1)over-bar(1)over-bar(1)over-bar)B surfaces:: A comparative STM study -: art. no. 165310

被引：28
|
作者：
Temko, Y [1 ]
Suzuki, T [1 ]
Kratzer, P [1 ]
Jacobi, K [1 ]
机构：
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2003年 / 68卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.68.165310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InAs quantum dots (QD's) were grown on GaAs(113)A and GaAs((1) over bar(1) over bar(3) over bar )B substrates by molecular-beam epitaxy. Atomically resolved scanning tunneling microscopy images acquired in situ from uncapped samples reveal the shape of the QD's including the atomic structure of their main bounding facets. On the (113)A substrate the QD's are elongated along [33 (2) over bar] with a wide size distribution, whereas on ((1) over bar(1) over bar(3) over bar )B they are rather round and exhibit a more uniform size distribution. These observations are related to the different morphology of the substrates before QD formation. The differences in shape, size, and size distribution are discussed in terms of facet growth kinetics.
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页数：12
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