Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

被引：0

作者：

Chen, CY ^{[1
]}

Chen, WD

Li, GH

Song, SF

Ding, K

Xu, ZJ

机构：

[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS | 2003年 / 12卷 / 04期

关键词：

a-Si domain; erbium; photoluminescence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H<Er> films.

引用

页码：438 / 442

页数：5

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