Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

被引：0
|
作者：
Chen, CY [1 ]
Chen, WD
Li, GH
Song, SF
Ding, K
Xu, ZJ
机构：
[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS | 2003年 / 12卷 / 04期
关键词：
a-Si domain; erbium; photoluminescence;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H<Er> films.
引用
收藏
页码：438 / 442
页数：5
相关论文
共 50 条
  • [21] Optical properties of Er and Er plus Yb doped hydrogenated amorphous silicon films
    de Oliveira, V. I.
    Freire, F. L., Jr.
    Zanatta, A. R.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (32) : 7709 - 7716
  • [22] Optical properties of a Fabry-Perot microcavity with Er-doped hydrogenated amorphous silicon active layer
    Dukin, AA
    Feoktistov, NA
    Golubev, VG
    Medvedev, AV
    Pevtsov, AB
    Sel'kin, AV
    APPLIED PHYSICS LETTERS, 2000, 77 (19) : 3009 - 3011
  • [23] Effects of silicon nanostructure evolution on Er3+ luminescence in silicon-rich silicon oxide/Er-doped silica multilayers
    Chang, Jee Soo
    Jhe, Ji-Hong
    Yang, Moon-Seung
    Shin, Jung H.
    Kim, Kyung Joong
    Moon, Dae Won
    APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [24] Photoluminescence from Er-doped silicon-rich silicon oxide film and Er-doped silicon-rich silicon nitride film and its annealing behavior
    Yuan, Fang-Cheng
    Ran, Guang-Zhao
    Chen, Yuan
    Zhang, Bo-Rui
    Qiao, Yong-Ping
    Fu, Ji-Shi
    Qin, Guo-Gang
    Ma, Zhen-Chang
    Zong, Wan-Hua
    Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 2001, 21 (06):
  • [25] Photoluminescence from Er-doped silicon-rich silicon oxide film and Er-doped silicon-rich silicon nitride film and its annealing behavior
    Yuan, FC
    Ran, GZ
    Chen, Y
    Zhang, BR
    Qiao, YP
    Fu, JS
    Qin, GG
    Ma, ZC
    Zong, WH
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2001, 21 (06) : 763 - 765
  • [26] Light emission of Er3+ in silicon
    不详
    LIGHT EMITTING SILICON FOR MICROPHOTONICS, 2003, 194 : 179 - 225
  • [27] Low energy shifted photoluminescence of Er3+ incorporated in amorphous hydrogenated silicon-germanium alloys
    Lopez-Luna, E.
    Vidal, M. A.
    Rodriguez, A. G.
    Navarro-Contreras, H.
    Kudriavtsev, Y.
    Asomoza, R.
    Villegas, A.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (16-17) : 976 - 981
  • [28] High Er3+ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots
    Lu, Ying-Wei
    Huang, Chao
    Cheng, Ji-Gui
    Larsen, Arne Nylandsted
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 676 : 428 - 431
  • [29] Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films
    Park, NM
    Kim, TY
    Kim, KH
    Sung, GY
    Cho, KS
    Shin, JH
    Kim, BH
    Park, SJ
    Lee, JK
    Nastasi, M
    2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 92 - 94
  • [30] Optical and structural properties of laser annealed Er-doped amorphous silicon thin films
    Bell, MJV
    Nunes, LAO
    Zanatta, AR
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) : 701 - 703
12345