Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

被引：2

作者：

Pichon, L. ^{[1
]}

Rogel, R. ^{[1
]}

Demami, F. ^{[1
]}

机构：

[1] CNRS, UMR 6164, IETR, Grp Microelect, F-35042 Rennes, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 06期

关键词：

NANO-OXIDATION; SURFACE; NANOSTRUCTURES; ANODIZATION; TRANSISTORS; SI(100); VOLTAGE; DNA;

D O I：

10.1088/0268-1242/25/6/065001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor.

引用

页数：5

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