Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

被引：1
|
作者：
Penarier, A. [1 ]
Jarrix, S. G. [1 ]
Perotin, M. [1 ]
Pascal, F. [1 ]
Delseny, C. [1 ]
机构：
[1] Univ Montpellier 2, IES CNRS UMR 5214, F-34095 Montpellier 5, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 05期
关键词：
D O I：
10.1088/0268-1242/22/5/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for the extraction of the extrinsic base-collector capacitance. Second, it emphasizes the similarity of the values obtained for series resistances in both the low-frequency and high-frequency ranges.
引用
收藏
页码：492 / 496
页数：5
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