Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

被引：1

作者：

Penarier, A. ^{[1
]}

Jarrix, S. G. ^{[1
]}

Perotin, M. ^{[1
]}

Pascal, F. ^{[1
]}

Delseny, C. ^{[1
]}

机构：

[1] Univ Montpellier 2, IES CNRS UMR 5214, F-34095 Montpellier 5, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 05期

关键词：

D O I：

10.1088/0268-1242/22/5/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via high-frequency S-parameter and low-frequency noise measurements. The extraction is exhaustively detailed here for a double purpose. First, it highlights the not-so-justified approximations so often made for the extraction of the extrinsic base-collector capacitance. Second, it emphasizes the similarity of the values obtained for series resistances in both the low-frequency and high-frequency ranges.

引用

页码：492 / 496

页数：5

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