Accurate broadband parameter extraction methodology for S-parameter measurements

GHz range operating frequencies of today's semiconductor devices demand accurate interconnect models. Constructing accurate and scalable models require extraction of interconnect parameters namely resistance-R, inductance-L, capacitance-C and conductance-G from measured S-parameters. The parameter extraction is error prone influenced by half-wavelength resonance. In this paper, we present a new methodology for accurately extracting interconnect parameters from measured S-parameters. We first analyze the parameter extraction errors and show that it can be mainly attributed to non-perfect de-embedding. Based on the error analysis, we derive an extraction flow for accurate interconnect characterization. The proposed method is validated with fabricated transmission line test structures. Extracted line parameters agree with well-known theoretical models, establishing accuracy of the method.